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How a new generation of high-voltage doorknob capacitors is pushing the boundaries of NMR technology
| Lugar de origen | XIAN, CHINA | 
|---|---|
| Nombre de la marca | XIWUER | 
| Certificación | ISO9001,ISO14001,ISO45001 | 
| Documento | High Voltage Ceramic Capaci...25.pdf | 
| Cantidad de orden mínima | 1 por ciento | 
| Precio | Negociable | 
| Detalles de empaquetado | CAJA DE CARTÓN | 
| Tiempo de entrega | 5-7 días | 
| Condiciones de pago | L/C, T/T | 
| Capacidad de la fuente | 4.000.000 PC al año | 
 
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x| Dissipación | - ¿Qué quieres decir?0040 | Voltaje que soporta | 1.5ur ● 1min | 
|---|---|---|---|
| Resistencia a aislamiento | ≧ 1.0 × 105mΩ | ||
| Resaltar | high voltage doorknob capacitors NMR,doorknob capacitors high voltage technology,NMR high voltage capacitors | ||
A Revolution in Dielectric Materials: From Stability to Functionality
Traditional capacitor dielectric materials often struggle to balance temperature stability and voltage coefficient. Our specialized barium strontium titanate-based composite ceramic dielectrics, developed through precise rare earth element doping and microstructural manipulation, achieve three breakthrough properties:
Near-zero voltage coefficient: Within the rated operating voltage range, the capacitance variation is controlled to within ±0.1%, ensuring accurate RF pulses at various power levels.
Wide Temperature Stability: Capacitance drift is less than ±0.5% from -55°C to +125°C, meeting the requirements of a full range of probe applications, from ambient to cryogenic temperatures.
Adaptive Dielectric Properties: In strong external magnetic fields, the dielectric material's magnetic susceptibility remains below 10⁻⁸, completely eliminating interference with the main magnetic field uniformity.
Drawing:
Parameters:
| No. | Specification | Dissipation | Withstanding voltage | Insulation resistance | Dimension(mm) | ||||
| 1 | 20kV-2000pF | ≦0.0040 | 1.5Ur● 1min | ≧1.0×105MΩ | D | H | L | D | M | 
| 2 | 20kV-10000pF | 45 | 19 | 23 | 12 | 5 | |||
| 3 | 20kV-18000pF | 65 | 15 | 19 | 12 | 5 | |||
| 4 | 30kV-1000pF | 80 | 17 | 25 | 12 | 5 | |||
| 5 | 30kV-2700pF | 45 | 24 | 32 | 12 | 4 | |||
| 6 | 30kV-12000pF | 60 | 20 | 28 | 12 | 4 | |||
| 7 | 40kV-150pF | 20 | 33 | 41 | 8 | 4 | |||
| 8 | 40kV-500pF | 28 | 33 | 41 | 8 | 4 | |||
| 9 | 40kV-7500pF | 80 | 24 | 29 | 12 | 6 | |||
| 10 | 40kV-10000pF | 80 | 22 | 26 | 16 | 5 | |||
| 11 | 50kV-1000pF | 50 | 30 | 34 | 12 | 4 | |||
| 12 | 50kV-1000pF | 32 | 27 | 31 | 16 | 5 | |||
| 13 | 50kV-5600pF | 80 | 31 | 35 | 16 | 5 | |||
| 14 | 60kV-1500pF | 50 | 31 | 34 | 12 | 5 | |||
| 15 | 60kV-3000pF | 65 | 32 | 35 | 16 | 5 | |||
| 16 | 100kV-500pF | 50 | 54 | 58 | 12 | 5 | |||
| 17 | 100kV-2000pF | 51 | 32 | 35 | 16 | 5 | |||
| 18 | Insulator type 100kV-1500pF | 68 | 36 | 40 | 16 | 5 | |||
| 19 | 150kV-820pF | 65 | 95 | 100 | 12 | 5 | |||
| 20 | 200kV-600pF | 50 | 90 | 94 | 16 | 5 | |||
A Revolution in Dielectric Materials: From Stability to Functionality
Traditional capacitor dielectric materials often struggle to balance temperature stability and voltage coefficient. Our specialized barium strontium titanate-based composite ceramic dielectrics, developed through precise rare earth element doping and microstructural manipulation, achieve three breakthrough properties:
Near-zero voltage coefficient: Within the rated operating voltage range, the capacitance variation is controlled to within ±0.1%, ensuring accurate RF pulses at various power levels.
Wide Temperature Stability: Capacitance drift is less than ±0.5% from -55°C to +125°C, meeting the requirements of a full range of probe applications, from ambient to cryogenic temperatures.
Adaptive Dielectric Properties: In strong external magnetic fields, the dielectric material's magnetic susceptibility remains below 10⁻⁸, completely eliminating interference with the main magnetic field uniformity.
The Engineering Value of Structural Innovation
The extremely compact interior of an MRI scanner poses significant challenges to component layout. Our 3D stacked doorknob capacitor addresses several pain points in traditional designs through its innovative internal connection architecture:
40% improvement in space utilization: Optimized electric field distribution enables higher energy density within the same volume.
Integrated thermal management: Direct thermal connection between the built-in micro heat pipe and the housing reduces thermal resistance by 30%, ensuring temperature stability under sustained high-power pulses.
Modular interconnect design: The patented snap-on connection system enables rapid assembly and maintenance, significantly reducing system integration complexity.
 


 
                         
                         
                        